DTD114ESTP

Part NumberDTD114ESTP

ManufacturerRohm Semiconductor

DescriptionTRANS PREBIAS NPN 300MW SPT

DatasheetDTD114E(K,S)

Package / CaseSC-72 Formed Leads

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT

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DTD114ESTP - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet

DTD114E(K,S)

Standard Package

5000

Manufacturer

Rohm Semiconductor

Series

Packaging

Tape & Box (TB)

Part Status

Obsolete

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

56 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

200MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

SC-72 Formed Leads

Supplier Device Package

SPT

Base Part Number

DTD114

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