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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet DRA2123Y0L
Standard Package 1
Manufacturer Panasonic Electronic Components
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 200mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package Mini3-G3-B
Base Part Number DRA2123
RN2315TE85LF
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Micro Commercial Co, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-323,
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Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3,
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