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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet DRA2113Z0L
Standard Package 1
Manufacturer Panasonic Electronic Components
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 200mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package Mini3-G3-B
Base Part Number DRA2113
RN2301,LF
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM,
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Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 12V 500mA 260MHz 150mW Surface Mount EMT3,
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Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200mW Surface Mount Mini3-G3-B,
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Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B,
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DRA2144T0L
Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount Mini3-G3-B,
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DTB114EKT146
Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SMT3,
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DRA2514E0L
Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200mW Surface Mount Mini3-G3-B,
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