DMT3011LDT-7

Part NumberDMT3011LDT-7

ManufacturerDiodes Incorporated

DescriptionMOSFET 2N-CH 30V 8A V-DFN3030-8

DatasheetDMT3011LDT

Package / Case8-VDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 30V 8A, 10.7A 1.9W Surface Mount V-DFN3030-8 (Type K)

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DMT3011LDT-7 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

DMT3011LDT

Standard Package

Manufacturer

Diodes Incorporated

Series

Packaging

Cut Tape (CT)

Part Status

Active

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A, 10.7A

Rds On (Max) @ Id, Vgs

20mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

641pF @ 15V

Power - Max

1.9W

Operating Temperature

-55°C ~ 155°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-VDFN Exposed Pad

Supplier Device Package

V-DFN3030-8 (Type K)

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