DMT3011LDT-7

Part NumberDMT3011LDT-7

ManufacturerDiodes Incorporated

DescriptionMOSFET 2N-CH 30V 8A V-DFN3030-8

DatasheetDMT3011LDT

Package / Case8-VDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 30V 8A, 10.7A 1.9W Surface Mount V-DFN3030-8 (Type K)

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DMT3011LDT-7 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	DMT3011LDT
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A, 10.7A
Rds On (Max) @ Id, Vgs	20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	641pF @ 15V
Power - Max	1.9W
Operating Temperature	-55°C ~ 155°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-VDFN Exposed Pad
Supplier Device Package	V-DFN3030-8 (Type K)

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