DMN3009LFVW-7
DMN3009LFVW-7
Part Number DMN3009LFVW-7 Description MOSFETN-CHAN 30V POWERDI3333-8 Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 60A (Tc) 1W (Ta) Surface Mount, Wettable Flank PowerDI3333-8 (Type UX)
To learn about the specification of DMN3009LFVW-7, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add DMN3009LFVW-7 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of DMN3009LFVW-7.
We are offering DMN3009LFVW-7 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
DMN3009LFVW-7 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMN3009LFVW Standard Package 1 Manufacturer Diodes Incorporated Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 15V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount, Wettable Flank Supplier Device Package PowerDI3333-8 (Type UX) Package / Case 8-PowerVDFN
DMN3009LFVW-7 - Related ProductsMore >>
STU13N60M2 STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Through Hole IPAK (TO-251), MDmesh™ II Plus
View
STP45N60DM6 STMicroelectronics, N-Channel 600V 30A (Tc) 210W (Tc) Through Hole TO-220, MDmesh™ DM6
View
TK40A06N1,S4X Toshiba Semiconductor and Storage, N-Channel 60V 40A (Tc) 30W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
View
SQM85N15-19_GE3 Vishay Siliconix, N-Channel 150V 85A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
View
DMG3418L-7 Diodes Incorporated, N-Channel 30V 4A (Ta) 1.4W (Ta) Surface Mount SOT-23,
View
DMN4060SVT-7 Diodes Incorporated, N-Channel 45V 4.8A (Ta) 1.2W (Ta) Surface Mount TSOT-26,
View
ZXMN2A01FTA Diodes Incorporated, N-Channel 20V 1.9A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
View
ZVN2110ASTZ Diodes Incorporated, N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),
View
SSM6K217FE,LF Toshiba Semiconductor and Storage, N-Channel 40V 1.8A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVII-H
View
IPB65R065C7ATMA2 Infineon Technologies, N-Channel 650V 33A (Tc) 171W (Tc) Surface Mount PG-TO263-3, CoolMOS™ C7
View
SI7386DP-T1-E3 Vishay Siliconix, N-Channel 30V 12A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
BUK9Y30-75B,115 Nexperia USA Inc., N-Channel 75V 34A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
View
DMN3009LFVW-7 - Tags
English
