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DMN2011UFDF-7

DMN2011UFDF-7

Part NumberDMN2011UFDF-7

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 20V 14.2A UDFN2020-6

DatasheetDMN2011UFDF

Package / Case6-UDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)

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DMN2011UFDF-7 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMN2011UFDF
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	14.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2248pF @ 10V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (Type F)
Package / Case	6-UDFN Exposed Pad

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