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DMN10H099SFG-7

DMN10H099SFG-7

Part NumberDMN10H099SFG-7

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 100V 4.2A PWRDI3333

DatasheetDMN10H099SFG

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 4.2A (Ta) 980mW (Ta) Surface Mount PowerDI3333-8

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DMN10H099SFG-7 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMN10H099SFG
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25.2nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1172pF @ 50V
FET Feature	-
Power Dissipation (Max)	980mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerDI3333-8
Package / Case	8-PowerVDFN

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