DMJ70H900HJ3

Part NumberDMJ70H900HJ3

ManufacturerDiodes Incorporated

DescriptionMOSFET BVDSS: 651V 800V TO251

DatasheetDMJ70H900HJ3

Package / CaseTO-251-3, IPak, Short Leads

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 700V 7A (Tc) 68W (Tc) Through Hole TO-251

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DMJ70H900HJ3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

DMJ70H900HJ3

Standard Package

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.4nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

603pF @ 50V

FET Feature

Power Dissipation (Max)

68W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251

Package / Case

TO-251-3, IPak, Short Leads

All categories

DMJ70H900HJ3

Part NumberDMJ70H900HJ3

ManufacturerDiodes Incorporated

DescriptionMOSFET BVDSS: 651V 800V TO251

DatasheetDMJ70H900HJ3

Package / CaseTO-251-3, IPak, Short Leads

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 700V 7A (Tc) 68W (Tc) Through Hole TO-251

DMJ70H900HJ3 - Product Attributes

DMJ70H900HJ3 - Tags