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DMG6601LVT-7

DMG6601LVT-7

Part NumberDMG6601LVT-7

ManufacturerDiodes Incorporated

DescriptionMOSFET N/P-CH 30V 26TSOT

DatasheetDMG6601LVT

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-26

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DMG6601LVT-7 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	DMG6601LVT
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.8A, 2.5A
Rds On (Max) @ Id, Vgs	55mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	422pF @ 15V
Power - Max	850mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	TSOT-26
Base Part Number	DMG6601

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