DMG4N65CTI

Part NumberDMG4N65CTI

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 650V 4A ITO-220AB

DatasheetDMG4N65CTI

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB

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DMG4N65CTI - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

DMG4N65CTI

Standard Package

Manufacturer

Diodes Incorporated

Series

Packaging

Tube

Part Status

Last Time Buy

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 25V

FET Feature

Power Dissipation (Max)

8.35W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220AB

Package / Case

TO-220-3 Full Pack, Isolated Tab

All categories

DMG4N65CTI

Part NumberDMG4N65CTI

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 650V 4A ITO-220AB

DatasheetDMG4N65CTI

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB

DMG4N65CTI - Product Attributes

DMG4N65CTI - Tags