DMG3N60SJ3

Part NumberDMG3N60SJ3

ManufacturerDiodes Incorporated

DescriptionMOSFET BVDSS: 501V 650V TO251

DatasheetDMG3N60SJ3

Package / CaseTO-251-3, IPak, Short Leads

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 2.8A (Tc) 41W (Tc) Through Hole TO-251

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DMG3N60SJ3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

DMG3N60SJ3

Standard Package

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

354pF @ 25V

FET Feature

Power Dissipation (Max)

41W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251

Package / Case

TO-251-3, IPak, Short Leads

All categories

DMG3N60SJ3

Part NumberDMG3N60SJ3

ManufacturerDiodes Incorporated

DescriptionMOSFET BVDSS: 501V 650V TO251

DatasheetDMG3N60SJ3

Package / CaseTO-251-3, IPak, Short Leads

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 2.8A (Tc) 41W (Tc) Through Hole TO-251

DMG3N60SJ3 - Product Attributes

DMG3N60SJ3 - Tags