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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet DME20101
Standard Package 1
Manufacturer Panasonic Electronic Components
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA, 10V
Power - Max 300mW
Frequency - Transition 150MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Supplier Device Package Mini5-G3-B
Base Part Number DME20101
CMKT2207 TR
Central Semiconductor Corp, Bipolar (BJT) Transistor Array NPN, PNP Complementary 40V, 60V 600mA 300MHz, 200MHz 350mW Surface Mount SOT-363,
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Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 300MHz, 200MHz 200mW Surface Mount SOT-363,
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ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA 200MHz 700mW Surface Mount SuperSOT™-6,
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Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6,
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Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 65V 100mA 100MHz 300mW Surface Mount 6-TSSOP,
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