DF23MR12W1M1B11BOMA1


DF23MR12W1M1B11BOMA1

Part NumberDF23MR12W1M1B11BOMA1

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DF23MR12W1M1B11BOMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package24
ManufacturerInfineon Technologies
SeriesCoolSiC™
PackagingTray
Part StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C25A
Rds On (Max) @ Id, Vgs45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 800V
Power - Max20mW
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

DF23MR12W1M1B11BOMA1 - Tags

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