DF200R12W1H3B27BOMA1

Part NumberDF200R12W1H3B27BOMA1

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Categories	Discrete Semiconductor Products / Transistors - IGBTs - Modules
Datasheet	DF200R12W1H3_B27
Standard Package	24
Manufacturer	Infineon Technologies
Series	-
Part Status	Active
IGBT Type	-
Configuration	2 Independent
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	30A
Power - Max	375W
Vce(on) (Max) @ Vge, Ic	1.3V @ 15V, 30A
Current - Collector Cutoff (Max)	1mA
Input Capacitance (Cies) @ Vce	2nF @ 25V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module