DF200R12KE3HOSA1


DF200R12KE3HOSA1

Part NumberDF200R12KE3HOSA1

Manufacturer

Description

Datasheet

Package / CaseModule

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Lead TimeTo be Confirmed

Detailed Description

DF200R12KE3HOSA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Modules
Datasheet
Standard Package10
ManufacturerInfineon Technologies
Series-
Part StatusActive
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200V
Power - Max1040W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 200A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce14nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

DF200R12KE3HOSA1 - Tags

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