DF1000R17IE4BOSA1


DF1000R17IE4BOSA1

Part NumberDF1000R17IE4BOSA1

Manufacturer

Description

Datasheet

Package / CaseModule

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Lead TimeTo be Confirmed

Detailed Description

DF1000R17IE4BOSA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Modules
Datasheet
Standard Package2
ManufacturerInfineon Technologies
Series-
Part StatusActive
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1700V
Power - Max6250W
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 1000A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce81nF @ 25V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

DF1000R17IE4BOSA1 - Tags

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