DDTC115GE-7

Part NumberDDTC115GE-7

ManufacturerDiodes Incorporated

DescriptionTRANS PREBIAS NPN 150MW SOT523

DatasheetDDTC1x4GE, DDTC115GE

Package / CaseSOT-523

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount SOT-523

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DDTC115GE-7 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet

DDTC1x4GE, DDTC115GE

Standard Package

3000

Manufacturer

Diodes Incorporated

Series

Packaging

Tape & Reel (TR)

Part Status

Active

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Emitter Base (R2)

100 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

82 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-523

Supplier Device Package