Categories	Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet	CUHS20S30 Datasheet
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	30V
Current - Average Rectified (Io)	2A
Voltage - Forward (Vf) (Max) @ If	410mV @ 2A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	500µA @ 30V
Capacitance @ Vr, F	390pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	2-SMD, Flat Lead
Supplier Device Package	US2H
Operating Temperature - Junction	150°C (Max)

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MMBD301LT1G	ON Semiconductor, RF Diode Schottky - Single 30V 200mW SOT-23-3 (TO-236),	View
CRS06(TE85L,Q,M)	Toshiba Semiconductor and Storage, Diode Schottky 20V 1A Surface Mount S-FLAT (1.6x3.5),	View
JDH2S02SL,L3F	Toshiba Semiconductor and Storage, Diode Schottky 10V 10mA (DC) Surface Mount SL2,	View
MMBD355LT1G	ON Semiconductor, RF Diode Schottky - 1 Pair Common Anode 7V 225mW SOT-23-3 (TO-236),	View

CUHS20S30,H3F

Part NumberCUHS20S30,H3F