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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet CSICD10-1200 Datasheet
Standard Package 1
Manufacturer Central Semiconductor Corp
Series -
Packaging Cut Tape (CT)
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 250µA @ 1200V
Capacitance @ Vr, F 500pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature - Junction -55°C ~ 175°C
GB2X50MPS12-227
GeneSiC Semiconductor, Diode Array 2 Independent Silicon Carbide Schottky 1200V 93A (DC) Chassis Mount SOT-227-4, miniBLOC,
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C4D30120D
Cree/Wolfspeed, Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 21.5A Through Hole TO-247-3, Z-Rec®
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C4D08120A
Cree/Wolfspeed, Diode Silicon Carbide Schottky 1200V 24.5A (DC) Through Hole TO-220-2, Z-Rec®
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C3D06060F
Cree/Wolfspeed, Diode Silicon Carbide Schottky 600V 7.5A (DC) Through Hole TO-220-F2, Z-Rec®
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GC2X5MPS12-247
GeneSiC Semiconductor, Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 27A (DC) Through Hole TO-247-3,
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FFSP1665A
ON Semiconductor, Diode Silicon Carbide Schottky 650V 16A (DC) Through Hole TO-220-2,
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C3D03060E
Cree/Wolfspeed, Diode Silicon Carbide Schottky 600V 11A (DC) Surface Mount TO-252-2, Z-Rec®
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LSIC2SD065C16A
Littelfuse Inc., Diode Silicon Carbide Schottky 650V 38A (DC) Surface Mount TO-252, (D-Pak), Gen2
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C3D02060F
Cree/Wolfspeed, Diode Silicon Carbide Schottky 600V 4A (DC) Through Hole TO-220-F2, Z-Rec®
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CDBJFSC3650-G
Comchip Technology, Diode Silicon Carbide Schottky 650V 3A (DC) Through Hole TO-220F,
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C4D15120H
Cree/Wolfspeed, Diode Silicon Carbide Schottky 1200V 39A (DC) Through Hole TO-247-2, Z-Rec®
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FFSH4065A
ON Semiconductor, Diode Silicon Carbide Schottky 650V 48A (DC) Through Hole TO-247-2,
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