CSICD10-1200 TR13

Part NumberCSICD10-1200 TR13

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Categories	Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet	CSICD10-1200 Datasheet
Standard Package	1
Manufacturer	Central Semiconductor Corp
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io)	10A
Voltage - Forward (Vf) (Max) @ If	1.7V @ 10A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	250µA @ 1200V
Capacitance @ Vr, F	500pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK
Operating Temperature - Junction	-55°C ~ 175°C

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STPSC20H12CWY	STMicroelectronics, Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 10A Through Hole TO-247-3, Automotive, AEC-Q101, ECOPACK®2	View
GC2X5MPS12-247	GeneSiC Semiconductor, Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 27A (DC) Through Hole TO-247-3,	View
CSD01060E	Cree/Wolfspeed, Diode Silicon Carbide Schottky 600V 4A (DC) Surface Mount TO-252-2, Zero Recovery™	View
C3D06060F	Cree/Wolfspeed, Diode Silicon Carbide Schottky 600V 7.5A (DC) Through Hole TO-220-F2, Z-Rec®	View
LSIC2SD120A08	Littelfuse Inc., Diode Silicon Carbide Schottky 1200V 24.5A (DC) Through Hole TO-220-2, Gen2	View
FFSPF2065A	ON Semiconductor, Diode Silicon Carbide Schottky 650V 20A (DC) Through Hole TO-220F-2FS,	View
GB2X100MPS12-227	GeneSiC Semiconductor, Diode Array 2 Independent Silicon Carbide Schottky 1200V 185A (DC) Chassis Mount SOT-227-4, miniBLOC,	View
GB2X50MPS12-227	GeneSiC Semiconductor, Diode Array 2 Independent Silicon Carbide Schottky 1200V 93A (DC) Chassis Mount SOT-227-4, miniBLOC,	View
LSIC2SD065E12CCA	Littelfuse Inc., Diode Silicon Carbide Schottky 650V 18.5A (DC) Through Hole TO-247-3, Automotive, AEC-Q101, GEN2	View