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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet CSICD05-1200 Datasheet
Standard Package 1
Manufacturer Central Semiconductor Corp
Series -
Packaging Cut Tape (CT)
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 5A
Voltage - Forward (Vf) (Max) @ If 1.7V @ 5A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 190µA @ 1200V
Capacitance @ Vr, F 240pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature - Junction -55°C ~ 175°C
C4D30120D
Cree/Wolfspeed, Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 21.5A Through Hole TO-247-3, Z-Rec®
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LSIC2SD120A10
Littelfuse Inc., Diode Silicon Carbide Schottky 1200V 28A (DC) Through Hole TO-220-2, Gen2
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FFSH20120A-F085
ON Semiconductor, Diode Silicon Carbide Schottky 1200V 30A (DC) Through Hole TO-247-2, Automotive, AEC-Q101
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SCS210KE2HRC
Rohm Semiconductor, Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 650V 20A (DC) Through Hole TO-247-3, Automotive, AEC-Q101
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FFSP3065A
ON Semiconductor, Diode Silicon Carbide Schottky 650V 30A (DC) Through Hole TO-220-2L,
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C4D10120A
Cree/Wolfspeed, Diode Silicon Carbide Schottky 1200V 33A (DC) Through Hole TO-220-2, Z-Rec®
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C6D08065A
Cree/Wolfspeed, Diode Silicon Carbide Schottky 650V 30A (DC) Through Hole TO-220-2, Z-Rec®
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LSIC2SD120D10
Littelfuse Inc., Diode Silicon Carbide Schottky 1200V 28A (DC) Surface Mount TO-263-2L, Gen2
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CDBJFSC101200-G
Comchip Technology, Diode Silicon Carbide Schottky 1200V 10A (DC) Through Hole TO-220F,
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CDBDSC8650-G
Comchip Technology, Diode Silicon Carbide Schottky 650V 25.5A (DC) Surface Mount D-PAK (TO-252),
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CDBJFSC8650-G
Comchip Technology, Diode Silicon Carbide Schottky 650V 8A (DC) Through Hole TO-220F,
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C3D08065I
Cree/Wolfspeed, Diode Silicon Carbide Schottky 650V 16.5A (DC) Through Hole TO-220-2 Isolated Tab, Z-Rec®
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