CSD19532Q5BT
CSD19532Q5BT
Part Number CSD19532Q5BT
Description MOSFET N-CH 100V 100A VSON
Package / Case 8-PowerTDFN
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)
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CSD19532Q5BT - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD19532Q5B Datasheet
Standard Package 1
Manufacturer Texas Instruments
Series NexFET™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4810pF @ 50V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 195W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN
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