CP647-MJ11015-WN


CP647-MJ11015-WN

Part NumberCP647-MJ11015-WN

Manufacturer

Description

Datasheet

Package / CaseDie

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Lead TimeTo be Confirmed

Detailed Description

CP647-MJ11015-WN - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerCentral Semiconductor Corp
Series-
PackagingBulk
Part StatusActive
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)30A
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic4V @ 300mA, 30A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30A, 5V
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

CP647-MJ11015-WN - Tags

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