CP302-MPSH10-WN


CP302-MPSH10-WN

Part NumberCP302-MPSH10-WN

Manufacturer

Description

Datasheet

Package / CaseDie

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

CP302-MPSH10-WN - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package53730
ManufacturerCentral Semiconductor Corp
Series-
Part StatusLast Time Buy
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Frequency - Transition650MHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max350mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

CP302-MPSH10-WN - Tags

CP302-MPSH10-WN CP302-MPSH10-WN PDF CP302-MPSH10-WN datasheet CP302-MPSH10-WN specification CP302-MPSH10-WN image CP302-MPSH10-WN India Renesas Electronics India CP302-MPSH10-WN buy CP302-MPSH10-WN CP302-MPSH10-WN price CP302-MPSH10-WN distributor CP302-MPSH10-WN supplier CP302-MPSH10-WN wholesales