Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Datasheet	CE3512K2
Standard Package	200
Manufacturer	CEL
Series	-
Packaging	Strip
Part Status	Active
Transistor Type	pHEMT FET
Frequency	12GHz
Gain	13.7dB
Voltage - Test	2V
Current Rating (Amps)	15mA
Noise Figure	0.5dB
Current - Test	10mA
Power - Output	125mW
Voltage - Rated	4V
Package / Case	4-Micro-X
Supplier Device Package	4-Micro-X

CE3520K3-C1	CEL, RF Mosfet pHEMT FET 2V 10mA 20GHz 13.8dB 125mW 4-Micro-X,	View
SD4933	STMicroelectronics, RF Mosfet N-Channel 50V 250mA 30MHz 24dB 300W M177,	View
IXZR18N50A-00	IXYS-RF, RF Mosfet N-Channel 100V 65MHz 23dB 350W PLUS247™-3, Z-MOS™	View
3SK293(TE85L,F)	Toshiba Semiconductor and Storage, RF Mosfet N-Channel Dual Gate 6V 10mA 800MHz 22dB USQ,	View
MRF166C	M/A-Com Technology Solutions, RF Mosfet N-Channel 28V 25mA 30MHz ~ 500MHz 16dB 20W 319-07, Style 3,	View
BF2040E6814HTSA1	Infineon Technologies, RF Mosfet N-Channel 5V 15mA 800MHz 23dB PG-SOT143-4,	View
VRF151	Microsemi Corporation, RF Mosfet N-Channel 50V 250mA 175MHz 14dB 150W M174,	View
STAC2932FW	STMicroelectronics, RF Mosfet N-Channel 50V 250mA 175MHz 390W STAC244F,	View
MRF157	M/A-Com Technology Solutions, RF Mosfet N-Channel 50V 800mA 80MHz 21dB 600W 368-03, Style 2,	View
STAC4933	STMicroelectronics, RF Mosfet N-Channel 50V 250mA 30MHz 24dB 300W STAC177B,	View
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3SK293(TE85L,F)	Toshiba Semiconductor and Storage, RF Mosfet N-Channel Dual Gate 6V 10mA 800MHz 22dB USQ,	View

CE3512K2

Part NumberCE3512K2