CDBJSC8650-G

Part NumberCDBJSC8650-G

ManufacturerComchip Technology

DescriptionDIODE SILICON CARBIDE POWER SCHO

DatasheetCDBJSC8650-G

Package / CaseTO-220-2

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Silicon Carbide Schottky 650V 8A (DC) Through Hole TO-220-2

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CDBJSC8650-G - Product Attributes

Categories

Discrete Semiconductor Products / Diodes - Rectifiers - Single

Datasheet

CDBJSC8650-G

Standard Package

Manufacturer

Comchip Technology

Series

Packaging

Tube

Part Status

Active

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.7V @ 8A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

100µA @ 650V

Capacitance @ Vr, F

560pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220-2

Operating Temperature - Junction

-55°C ~ 175°C

All categories

CDBJSC8650-G

Part NumberCDBJSC8650-G

ManufacturerComchip Technology

DescriptionDIODE SILICON CARBIDE POWER SCHO

DatasheetCDBJSC8650-G

Package / CaseTO-220-2

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Silicon Carbide Schottky 650V 8A (DC) Through Hole TO-220-2

CDBJSC8650-G - Product Attributes

CDBJSC8650-G - Tags