CDBGBSC201200-G

Part NumberCDBGBSC201200-G

ManufacturerComchip Technology

DescriptionDIODE DUAL SILICON CARBIDE POWER

DatasheetCDBGBSC201200-G

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 25.9A (DC) Through Hole TO-247-3

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CDBGBSC201200-G - Product Attributes

Categories

Discrete Semiconductor Products / Diodes - Rectifiers - Arrays

Datasheet

CDBGBSC201200-G

Standard Package

Manufacturer

Comchip Technology

Series

Packaging

Tube

Part Status

Active

Diode Configuration

1 Pair Common Cathode

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io) (per Diode)

25.9A (DC)

Voltage - Forward (Vf) (Max) @ If

1.8V @ 10A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

100µA @ 1200V

Operating Temperature - Junction

-55°C ~ 175°C

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

All categories

CDBGBSC201200-G

Part NumberCDBGBSC201200-G

ManufacturerComchip Technology

DescriptionDIODE DUAL SILICON CARBIDE POWER

DatasheetCDBGBSC201200-G

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 25.9A (DC) Through Hole TO-247-3

CDBGBSC201200-G - Product Attributes

CDBGBSC201200-G - Tags