BUZ31L H

Part NumberBUZ31L H

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 13.5A TO220-3

DatasheetBUZ 31L H

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 13.5A (Tc) 95W (Tc) Through Hole PG-TO220-3

To learn about the specification of BUZ31L H, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BUZ31L H with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BUZ31L H.
We are offering BUZ31L H for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

BUZ31L H - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BUZ 31L H

Standard Package

500

Manufacturer

Infineon Technologies

Series

SIPMOS®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

13.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

200mOhm @ 7A, 5V

Vgs(th) (Max) @ Id

2V @ 1mA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

Power Dissipation (Max)

95W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

All categories