BUZ30A

Part NumberBUZ30A

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 21A TO-220AB

DatasheetBUZ30A

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 21A (Tc) 125W (Tc) Through Hole PG-TO220-3-1

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BUZ30A - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BUZ30A

Standard Package

500

Manufacturer

Infineon Technologies

Series

SIPMOS®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 25V

FET Feature

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

All categories

BUZ30A

Part NumberBUZ30A

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 21A TO-220AB

DatasheetBUZ30A

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 21A (Tc) 125W (Tc) Through Hole PG-TO220-3-1

BUZ30A - Product Attributes

BUZ30A - Tags