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BUV21G

BUV21G

Part NumberBUV21G

ManufacturerON Semiconductor

DescriptionTRANS NPN 200V 40A TO-3

DatasheetBUV21

Package / CaseTO-204AE

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Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 200V 40A 8MHz 250W Through Hole TO-3

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BUV21G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	BUV21
Standard Package	100
Manufacturer	ON Semiconductor
Series	SWITCHMODE™
Packaging	Tray
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	40A
Voltage - Collector Emitter Breakdown (Max)	200V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 3A, 25A
Current - Collector Cutoff (Max)	3mA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 12A, 2V
Power - Max	250W
Frequency - Transition	8MHz
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AE
Supplier Device Package	TO-3

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BUV21G - Tags

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