BUL1102E
BUL1102E
Part Number BUL1102E Description TRANS NPN 450V 4A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 450V 4A 70W Through Hole TO-220
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BUL1102E - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet BUL1102E Standard Package 50 Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 450V Vce Saturation (Max) @ Ib, Ic 1.5V @ 400mA, 2A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 2A, 5V Power - Max 70W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220
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PMBT3904,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 250mW Surface Mount TO-236AB,
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APT13003DI-G1 Diodes Incorporated, Bipolar (BJT) Transistor NPN 450V 1.5A 4MHz 24W Through Hole TO-251,
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MMBT3904 RFG Taiwan Semiconductor Corporation, Bipolar (BJT) Transistor NPN 40V 200mA 250MHz 300mW Surface Mount SOT-23,
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MMBT5088 ON Semiconductor, Bipolar (BJT) Transistor NPN 30V 100mA 50MHz 350mW Surface Mount SOT-23,
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BC850C,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250mW Surface Mount TO-236AB,
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