Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BUK9Y12-100E
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	Automotive, AEC-Q101
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	12mOhm @ 25A, 5V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	64nC @ 5V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	7973pF @ 25V
FET Feature	-
Power Dissipation (Max)	238W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669

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2N7002H6327XTSA2	Infineon Technologies, N-Channel 60V 300mA (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™	View
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BUK9Y12-100E,115

Part NumberBUK9Y12-100E,115