BUK9E1R8-40E,127

Part NumberBUK9E1R8-40E,127

ManufacturerNXP USA Inc.

DescriptionMOSFET N-CH 40V 120A I2PAK

DatasheetBUK9E1R8-40E

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 120A (Tc) 349W (Tc) Through Hole I2PAK

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BUK9E1R8-40E,127 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BUK9E1R8-40E

Standard Package

1000

Manufacturer

NXP USA Inc.

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

16400pF @ 25V

FET Feature

Power Dissipation (Max)

349W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

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