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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK966R5-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V
FET Feature -
Power Dissipation (Max) 182W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IPB60R280C6ATMA1
Infineon Technologies, N-Channel 600V 13.8A (Tc) 104W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™
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IRL3705ZSTRLPBF
Infineon Technologies, N-Channel 55V 75A (Tc) 130W (Tc) Surface Mount D2PAK, HEXFET®
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TK14N65W,S1F
Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-247, DTMOSIV
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