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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK965R4-40E
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33.9nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 4483pF @ 25V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Through Hole TO-220, Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
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Infineon Technologies, N-Channel 600V 21A (Tc) 192W (Tc) Through Hole PG-TO220-3, CoolMOS™
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AO4486
Alpha & Omega Semiconductor Inc., N-Channel 100V 4.2A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
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STB10N95K5
STMicroelectronics, N-Channel 950V 8A (Tc) 130W (Tc) Surface Mount D2PAK, SuperMESH5™
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SIHA2N80E-GE3
Vishay Siliconix, N-Channel 800V 2.8A (Tc) 29W (Tc) Through Hole TO-220 Full Pack,
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