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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK962R8-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 25V
FET Feature -
Power Dissipation (Max) 324W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHH11N65EF-T1-GE3
Vishay Siliconix, N-Channel 650V 11A (Tc) 130W (Tc) Surface Mount PowerPAK® 8 x 8,
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FDMS86255ET150
ON Semiconductor, N-Channel 150V 10A (Ta), 63A (Tc) 3.3W (Ta), 136W (Tc) Surface Mount Power56, PowerTrench®
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FDP51N25
ON Semiconductor, N-Channel 250V 51A (Tc) 320W (Tc) Through Hole TO-220-3, UniFET™
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IXFH32N100X
IXYS, N-Channel 1000V 32A (Tc) 890W (Tc) Through Hole TO-247, HiPerFET™
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FDMS86252
ON Semiconductor, N-Channel 150V 4.6A (Ta), 16A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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SQD23N06-31L_GE3
Vishay Siliconix, N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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SIHH28N60E-T1-GE3
Vishay Siliconix, N-Channel 600V 29A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,
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MVMBF0201NLT1G
ON Semiconductor, N-Channel 20V 300mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,
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STP11NM60ND
STMicroelectronics, N-Channel 600V 10A (Tc) 90W (Tc) Through Hole TO-220AB, FDmesh™ II
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TSM60N06CP ROG
Taiwan Semiconductor Corporation, N-Channel 60V 66A (Tc) 44.6W (Tc) Surface Mount TO-252, (D-Pak),
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SUM110N10-09-E3
Vishay Siliconix, N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
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PSMN1R6-30BL,118
Nexperia USA Inc., N-Channel 30V 100A (Tc) 306W (Tc) Surface Mount D2PAK,
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