BUK956R1-100E,127

Part NumberBUK956R1-100E,127

ManufacturerNXP USA Inc.

DescriptionMOSFET N-CH 100V 120A TO220AB

DatasheetBUK956R1-100E

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 120A (Tc) 349W (Tc) Through Hole TO-220AB

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BUK956R1-100E,127 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BUK956R1-100E

Standard Package

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

133nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

17460pF @ 25V

FET Feature

Power Dissipation (Max)

349W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

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