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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9230-100B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 3805pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMG3402L-7
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TK380A60Y,S4X
Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Tc) 30W Through Hole TO-220SIS, DTMOSV
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BUK9230-100B,118
Nexperia USA Inc., N-Channel 100V 47A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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Rohm Semiconductor, N-Channel 600V 20A (Tc) 68W (Tc) Through Hole TO-3PF,
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ON Semiconductor, N-Channel 800V 3A (Tc) 107W (Tc) Through Hole TO-220-3, QFET®
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