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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9230-100B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 3805pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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ON Semiconductor, N-Channel 150V 5A (Ta), 27A (Tc) 3.1W (Ta), 89W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
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ON Semiconductor, N-Channel 600V 9A (Tc) 42W (Tc) Through Hole TO-220F, UniFET™
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NTHL110N65S3F
ON Semiconductor, N-Channel 650V 30A (Tc) 240W (Tc) Through Hole TO-247-3,
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IPD60R280P7ATMA1
Infineon Technologies, N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
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