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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK664R4-55C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 7750pF @ 25V
FET Feature -
Power Dissipation (Max) 204W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHW61N65EF-GE3
Vishay Siliconix, N-Channel 650V 64A (Tc) 520W (Tc) Through Hole TO-247AD,
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DMNH6021SPSQ-13
Diodes Incorporated, N-Channel 60V 55A (Tc) 1.6W (Ta), 53W (Tc) Surface Mount PowerDI5060-8, Automotive, AEC-Q101
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R6011ENJTL
Rohm Semiconductor, N-Channel 600V 11A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),
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CPC3980ZTR
IXYS Integrated Circuits Division, N-Channel 800V 1.8W (Ta) Surface Mount SOT-223,
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NTR4003NT3G
ON Semiconductor, N-Channel 30V 500mA (Ta) 690mW (Ta) Surface Mount SOT-23-3 (TO-236),
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SIHJ6N65E-T1-GE3
Vishay Siliconix, N-Channel 650V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8,
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BSN20BKR
Nexperia USA Inc., N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB,
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DMN3053L-7
Diodes Incorporated, N-Channel 30V 4A (Ta) 760mW (Ta) Surface Mount SOT-23,
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BSS806NEH6327XTSA1
Infineon Technologies, N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3, Automotive, AEC-Q101, HEXFET®
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IPN60R360P7SATMA1
Infineon Technologies, N-Channel 600V 9A (Tc) 7W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
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BUK664R4-55C,118
Nexperia USA Inc., N-Channel 55V 100A (Tc) 204W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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PSMN2R8-40PS,127
Nexperia USA Inc., N-Channel 40V 100A (Tc) 211W (Tc) Through Hole TO-220AB,
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