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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK663R2-40C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 8020pF @ 25V
FET Feature -
Power Dissipation (Max) 204W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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FDD8780
ON Semiconductor, N-Channel 25V 35A (Tc) 50W (Tc) Surface Mount TO-252AA, PowerTrench®
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STMicroelectronics, N-Channel 1500V 2.5A (Tc) 140W (Tc) Surface Mount H²PAK, PowerMESH™
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Toshiba Semiconductor and Storage, N-Channel 100V 55A (Ta) 157W (Tc) Surface Mount DPAK+, U-MOSVIII-H
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IRFR420TRPBF
Vishay Siliconix, N-Channel 500V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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DMN61D9UWQ-13
Diodes Incorporated, N-Channel 60V 400mA (Ta) 440mW (Ta) Surface Mount SOT-323,
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