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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK662R4-40C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 199nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 11334pF @ 25V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SISA04DN-T1-GE3
Vishay Siliconix, N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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STL120N4F6AG
STMicroelectronics, N-Channel 40V 55A (Tc) 96W (Tc) Surface Mount PowerFlat™ (5x6), Automotive, AEC-Q101, STripFET™ F6
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IRFB5615PBF
Infineon Technologies, N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB,
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BFL4026-1E
ON Semiconductor, N-Channel 900V 3.5A (Tc) 2W (Ta), 35W (Tc) Through Hole TO-220F-3FS,
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STB30NF20
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SIHG33N60E-GE3
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DMN1008UFDF-13
Diodes Incorporated, N-Channel 12V 12.2A (Ta) 700mW (Ta) Surface Mount U-DFN2020-6 (Type F), Automotive, AEC-Q101
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BSS127H6327XTSA2
Infineon Technologies, N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount SOT-23-3, SIPMOS®
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Texas Instruments, N-Channel 100V 150A (Ta) 375W (Tc) Through Hole TO-220-3, NexFET™
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SI7820DN-T1-E3
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SQD23N06-31L_GE3
Vishay Siliconix, N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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TSM85N10CZ C0G
Taiwan Semiconductor Corporation, N-Channel 100V 81A (Tc) 210W (Tc) Through Hole TO-220,
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