BUJ100,412


BUJ100,412

Part NumberBUJ100,412

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BUJ100,412 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package5000
ManufacturerWeEn Semiconductors
Series-
PackagingBulk
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)400V
Vce Saturation (Max) @ Ib, Ic1V @ 150mA, 750mA
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce9 @ 750mA, 5V
Power - Max2W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Base Part NumberBUJ100

BUJ100,412 - Tags

BUJ100,412 BUJ100,412 PDF BUJ100,412 datasheet BUJ100,412 specification BUJ100,412 image BUJ100,412 India Renesas Electronics India BUJ100,412 buy BUJ100,412 BUJ100,412 price BUJ100,412 distributor BUJ100,412 supplier BUJ100,412 wholesales