BTS282Z E3230


BTS282Z E3230

Part NumberBTS282Z E3230

Manufacturer

Description

Datasheet

Package / CaseTO-220-7

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BTS282Z E3230 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package500
ManufacturerInfineon Technologies
SeriesTEMPFET®
PackagingTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)49V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs232nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V
FET FeatureTemperature Sensing Diode
Power Dissipation (Max)300W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageP-TO220-7-230
Package / CaseTO-220-7

BTS282Z E3230 - Tags

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