BSZ180P03NS3GATMA1

Part NumberBSZ180P03NS3GATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 30V 39.6A TSDSON-8

DatasheetBSZ180P03NS3 G

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 9A (Ta), 39.6A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount PG-TSDSON-8

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BSZ180P03NS3GATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BSZ180P03NS3 G

Standard Package

5000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 39.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.1V @ 48µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2220pF @ 15V

FET Feature

Power Dissipation (Max)

2.1W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8

Package / Case

8-PowerTDFN

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