BSZ15DC02KDHXTMA1

Part NumberBSZ15DC02KDHXTMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	BSZ15DC02KDH*
Standard Package	1
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q101, HEXFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel Complementary
FET Feature	Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.1A, 3.2A
Rds On (Max) @ Id, Vgs	55mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs	2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	419pF @ 10V
Power - Max	2.5W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	PG-TSDSON-8-FL

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BSZ15DC02KDHXTMA1	Infineon Technologies, Mosfet Array N and P-Channel Complementary 20V 5.1A, 3.2A 2.5W Surface Mount PG-TSDSON-8-FL, Automotive, AEC-Q101, HEXFET®	View