BSZ120P03NS3EGATMA1

Part NumberBSZ120P03NS3EGATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 30V 40A TSDSON-8

DatasheetBSZ120P03NS3E G

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 11A (Ta), 40A (Tc) 2.1W (Ta), 52W (Tc) Surface Mount PG-TSDSON-8

To learn about the specification of BSZ120P03NS3EGATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSZ120P03NS3EGATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSZ120P03NS3EGATMA1.
We are offering BSZ120P03NS3EGATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

BSZ120P03NS3EGATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BSZ120P03NS3E G

Standard Package

5000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.1V @ 73µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3360pF @ 15V

FET Feature

Power Dissipation (Max)

2.1W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8

Package / Case

8-PowerTDFN

All categories