BSZ086P03NS3EGATMA1


BSZ086P03NS3EGATMA1

Part NumberBSZ086P03NS3EGATMA1

Manufacturer

Description

Datasheet

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BSZ086P03NS3EGATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs8.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs57.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4785pF @ 15V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8
Package / Case8-PowerTDFN

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BSZ086P03NS3EGATMA1 - Tags

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