BSZ035N03LSGATMA1
BSZ035N03LSGATMA1
Part Number BSZ035N03LSGATMA1 Description MOSFET N-CH 30V 40A TSDSON-8 Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 20A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8
To learn about the specification of BSZ035N03LSGATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSZ035N03LSGATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSZ035N03LSGATMA1.
We are offering BSZ035N03LSGATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSZ035N03LSGATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSZ035N03LS G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 15V FET Feature - Power Dissipation (Max) 2.1W (Ta), 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8 Package / Case 8-PowerTDFN
BSZ035N03LSGATMA1 - Related ProductsMore >>
IPP052NE7N3GXKSA1 Infineon Technologies, N-Channel 75V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3-1, OptiMOS™
View
DN2625K4-G Microchip Technology, N-Channel 250V 1.1A (Tj) Surface Mount TO-252, (D-Pak),
View
CSD19532KTTT Texas Instruments, N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
View
ZXMN2B03E6TA Diodes Incorporated, N-Channel 20V 4.3A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
View
IPD038N06N3GATMA1 Infineon Technologies, N-Channel 60V 90A (Tc) 188W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
TPN1600ANH,L1Q Toshiba Semiconductor and Storage, N-Channel 100V 17A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
View
SIHP11N80E-GE3 Vishay Siliconix, N-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-220AB,
View
SIHG47N60E-E3 Vishay Siliconix, N-Channel 600V 47A (Tc) 357W (Tc) Through Hole TO-247AC,
View
IRFR110TRLPBF Vishay Siliconix, N-Channel 100V 4.3A (Tc) 25W (Tc) Surface Mount,
View
FCP11N60F ON Semiconductor, N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3, SuperFET™
View
IXFK180N10 IXYS, N-Channel 100V 180A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™
View
R6011ENJTL Rohm Semiconductor, N-Channel 600V 11A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),
View
BSZ035N03LSGATMA1 - Tags
English
