BSS316NH6327XTSA1

Part NumberBSS316NH6327XTSA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSS316N
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id	2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	94pF @ 15V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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TK650A60F,S4X	Toshiba Semiconductor and Storage, N-Channel 600V 11A (Ta) 45W (Tc) Through Hole TO-220SIS, U-MOSIX	View
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SK8403170L	Panasonic Electronic Components, N-Channel 30V 16A (Ta), 59A (Tc) 2W (Ta), 24.6W (Tc) Surface Mount HSSO8-F1-B,	View
BUK9875-100A/CUX	Nexperia USA Inc., N-Channel 100V 7A (Tc) 8W (Tc) Surface Mount SC-73, TrenchMOS™	View