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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSS138BK
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 56pF @ 10V
FET Feature -
Power Dissipation (Max) 350mW (Ta), 1.14W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
CSD16342Q5A
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PMZB600UNELYL
Nexperia USA Inc., N-Channel 20V 600mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3, TrenchMOS™
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Rohm Semiconductor, N-Channel 200V 5A (Tc) 29W (Tc) Surface Mount TO-252,
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CSD18537NQ5AT
Texas Instruments, N-Channel 60V 50A (Ta) 3.2W (Ta), 75W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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IRFS7430TRLPBF
Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®, StrongIRFET™
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